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| BFG25A/X NPN 5 GHz wideband transistor Rev. 04 -- 27 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * Low current consumption (100 A to 1 mA) * Low noise figure * Gold metallization ensures excellent reliability. APPLICATIONS * RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: %MU. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts 165 C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; = opt; Tamb = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; = opt; Tamb = 25 C CONDITIONS - - - - 50 3.5 - - - MIN. - - - - 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 - - - - GHz dB dB dB UNIT V V mA mW Rev. 04 - 27 November 2007 2 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cre fT GUM F PARAMETER collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 0.5 mA; VCE = 1 V IC = ic = 0; VCB = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 500 MHz IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; = opt; Tamb = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; = opt; Tamb = 25 C Note MIN. - 50 - 3.5 - - - TYP. - 80 0.21 5 18 1.8 2 PARAMETER CONDITIONS VALUE 320 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 165 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. 8 5 2 BFG25A/X MAX. V V V UNIT 6.5 32 150 175 mA mW C C UNIT K/W thermal resistance from junction to soldering point note 1 MAX. 50 200 0.3 - - - - UNIT A pF GHz dB dB dB S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2 2 1 - S 11 1 - S 22 2 Rev. 04 - 27 November 2007 3 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MRC038 - 1 handbook,40 halfpage handbook, halfpage 100 MCD138 P tot (mW) 30 h FE 80 60 20 40 10 20 0 0 50 100 150 Ts (oC) 200 0 10 3 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. 0.3 handbook, halfpage C re (pF) 0.2 MCD139 handbook, halfpage 6 MCD140 fT (GHz) 4 0.1 2 0 0 2 4 VCB (V) 6 0 0 1 2 3 I C (mA) 4 IC = ic = 0; f = 1 MHz. VCE = 1 V; f = 500 MHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 04 - 27 November 2007 4 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 30 MCD141 handbook,20 halfpage MCD142 gain (dB) G UM gain (dB) 15 G UM 20 MSG MSG 10 10 5 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook,50 halfpage MCD143 gain (dB) 40 G UM handbook,50 halfpage MCD144 gain (dB) 40 G UM 30 30 20 MSG 10 20 MSG 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 IC = 0.5 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. IC = 1 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 04 - 27 November 2007 5 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 4 MCD145 handbook, halfpage 4 MCD146 F (dB) 3 f = 2 GHz 1 GHz 500 MHz 2 F (dB) 3 IC = 2 mA 1 mA 2 0.5 mA 1 1 0 10-1 1 IC (mA) 10 0 102 103 f (MHz) 104 VCE = 1 V. VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 6 dB 0.2 unstable regio n 4 dB 2.5 dB 5 10 10 * stability circle + j -j 0 0.2 0.5 MSG 15.6 dB 1 2 5 10 5 OPT F = 1.9 dB min 0.2 14 dB 12 dB 0.5 1 2 MCD147 IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 ; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; opt = 0.85, 5; Rn/50 = 2.4. Fig.12 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 6 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 6 dB 2 stability circle OPT F min = 2 dB 10 10 0.2 a unst ble r egio n 4 dB 3 dB 5 + j -j * 0 0.2 0.5 MSG 12.4 dB 1 2 5 10 5 11 dB 0.2 9 dB 0.5 1 2 MCD148 IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 ; Maximum stable gain = 12.4 dB; Fmin = 2 dB; opt = 0.78, 14; Rn/50 = 2.6. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth stability circle 2 OPT F = 2.4 dB min 0.5 sta bl eg er ion 6 dB 4 dB 3 dB un 0.2 * 5 10 +j 0 -j 7.5 dB 0.2 6 dB 5 10 0.2 MSG 0.5 9 dB 1 2 5 10 0.5 1 2 MCD149 IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 ; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; opt = 0.72, 38; Rn/50 = 1.9. Fig.14 Common emitter noise figure circles; typical values. Rev. 04 - 27 November 2007 7 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 -j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz 10 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 . 2 MCD150 Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 1 2 3 4 5 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD151 Fig.16 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 27 November 2007 8 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD153 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10 40 MHz 3 GHz 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 . 2 MCD152 Fig.18 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 27 November 2007 9 of 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads BFG25A/X SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 04 - 27 November 2007 10 of 12 NXP Semiconductors BFG25A/X NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 27 November 2007 11 of 12 NXP Semiconductors BFG25A/X NPN 5 GHz wideband transistor Revision history Revision history Document ID BFG25AX_N_4 Modifications: BFG25AX_3 (9397 750 02767) BFG25AX_2 BFG25AX_1 Release date 20071127 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG25AX_3 BFG25AX_2 BFG25AX_1 - * Fig. 1 on page 2; Figure note changed 19971029 19950901 19921101 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2007 Document identifier: BFG25AX_N_4 |
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